The AOT270AL/AOB270AL uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, i.
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Units V V A
VGS TC=25° C C TC=100° TA=25° C C TA=70° ID IDM IDSM IAS EAS PD PDSM TJ, TSTG
A A mJ W W ° C
Avalanche energy L=0.1mH TC=25° C Power Dissipation Power Dissipation
B
TC=100° C TA=25° C TA=70° C
A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
* Surface mount package TO263
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 12 50 0.25
Max 15 60 0.3
Units ° C/W ° C/W ° C/W
Rev 0 : Dec. 2012
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Free Datasheet http://www.datas.
isc N-Channel MOSFET Transistor AOB270AL ·FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOB270L |
Freescale |
75V N-Channel MOSFET | |
2 | AOB27S60 |
Alpha & Omega Semiconductors |
Power Transistor | |
3 | AOB27S60 |
INCHANGE |
N-Channel MOSFET | |
4 | AOB20B65M1 |
Alpha & Omega Semiconductors |
IGBT | |
5 | AOB20S60 |
Alpha & Omega Semiconductors |
Power Transistor | |
6 | AOB20S60 |
INCHANGE |
N-Channel MOSFET | |
7 | AOB20S60L |
Alpha & Omega Semiconductors |
Power Transistor | |
8 | AOB210L |
INCHANGE |
N-Channel MOSFET | |
9 | AOB210L |
Freescale |
30V N-Channel MOSFET | |
10 | AOB210L |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
11 | AOB2140L |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET | |
12 | AOB2140L |
INCHANGE |
N-Channel MOSFET |