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AOB27S60 |
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| Part Number | AOB27S60 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. ... |
| Features |
y C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA 357 2.9 100 20 -55 to 150 300 AOT27S60/AOB27S60 65 0.5 0.35 27 17 110 7.5 110 480 ±30
AOTF27S60
Units V V
27* 17* A A mJ mJ 50 0.4 W W/ oC V/ns ° C ° C AOTF27S60 65 -2.5 Units ° C/W ° C/W ° C/W
RθCS Ma... |
| Document |
 AOB27S60 Data Sheet
PDF 316.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOB27S60 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | AOB270AL |
INCHANGE |
N-Channel MOSFET |
|
| 3 | AOB270AL |
Alpha & Omega Semiconductors |
75V N-Channel MOSFET |
|
| 4 | AOB270L |
Freescale |
75V N-Channel MOSFET |
|
| 5 | AOB20B65M1 |
Alpha & Omega Semiconductors |
IGBT |
|