AFN6011S - Alfa-MOS

AFN6011S N-Channel Enhancement Mode MOSFET

AFN6011S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 65V/40A, RDS(on)= 7.8mΩ@VGS=10V 65V/20A, RDS(on)=10mΩ@VGS=6.0V .

Features

65V/40A, RDS(on)= 7.8mΩ@VGS=10V 65V/20A, RDS(on)=10mΩ@VGS=6.0V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin Description ( TO-220-3L ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN6011S AFN6011ST220TG AAAAAA TO-220-3L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN6011ST220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.D Dec. 2013 Description Gate Drain Source Unit Tube Quantity 50 EA www.alfa-mos.com Page 1 Alfa-MOS T.