AFN6027S - Alfa-MOS

AFN6027S N-Channel Enhancement Mode MOSFET

AFN6027S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features z 60V/40A,RDS(ON)= 5.0mΩ@VGS=10V z 60V/30A,RDS(ON)= 6.2mΩ@VGS=6.

Features

z 60V/40A,RDS(ON)= 5.0mΩ@VGS=10V z 60V/30A,RDS(ON)= 6.2mΩ@VGS=6.0V z 60V/20A,RDS(ON)= 8.4mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Pin Description ( TO-252-2L ) Application z Motor and Load Control z Power Management in White LED System z Push Pull Converter z LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN6027ST252RG 6027S TO-252-2L ※ A Lot code ※ B Date code ※ AFN6027ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen
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