AFN6098S - Alfa-MOS

AFN6098S N-Channel MOSFET

AFN6098S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super .

Features

60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design Pin Description ( TO-262 ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. AFN6098ST262TG Part Marking 6098S AAAAAA Package TO-262 BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN6098ST262TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Mar. 2016 Description Gate Drain Source Unit Tube Quantity 50 EA www.alfa-mos.com Page 1 Alfa-MOS Technology AFN6098S 6.