AFN6035S - Alfa-MOS

AFN6035S N-Channel Enhancement Mode MOSFET

AFN6035S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features  60V/40A,RDS(ON)= 4.5mΩ@VGS=10V  60V/30A,RDS(ON)= 5.5mΩ@VGS=6.

Features

 60V/40A,RDS(ON)= 4.5mΩ@VGS=10V
 60V/30A,RDS(ON)= 5.5mΩ@VGS=6.0V
 60V/20A,RDS(ON)= 7.2mΩ@VGS=4.5V
 Super high density cell design for extremely low RDS (ON)
 TO-220-3L package design Pin Description ( TO-220-3L ) Application
 Synchronous Rectifier
 Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN6035S AFN6035ST220TG AAAAAA TO-220-3L BBBBBB ※ A Lot code ※ B Date code ※ AFN6035ST220TG : Tube ; Pb- Free ; Halogen
  –Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2018 Description Gate Drain Source Unit T.