AFN6011S |
Part Number | AFN6011S |
Manufacturer | Alfa-MOS |
Description | AFN6011S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and ... |
Features |
65V/40A, RDS(on)= 7.8mΩ@VGS=10V 65V/20A, RDS(on)=10mΩ@VGS=6.0V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Pin Description ( TO-220-3L )
Application
Synchronous Rectifier Power Supplies
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN6011S
AFN6011ST220TG
AAAAAA
TO-220-3L
BBBBBB
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN6011ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.D Dec. 2013
Description Gate Drain Source
Unit Tube
Quantity 50 EA
www.alfa-mos.com
Page 1
Alfa-MOS
T... |
Document |
AFN6011S Data Sheet
PDF 551.09KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AFN6018S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
2 | AFN6003S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
3 | AFN6027S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
4 | AFN6035S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
5 | AFN6095S |
Alfa-MOS |
N-Channel MOSFET |