AFN6252S - Alfa-MOS

AFN6252S N-Channel MOSFET

AFN6252S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features  150V/5.9A,RDS(ON)= 64mΩ@VGS=10V.

Features

 150V/5.9A,RDS(ON)= 64mΩ@VGS=10V
 150V/4.8A,RDS(ON)= 70mΩ@VGS=6V
 Super high density cell design for extremely low RDS (ON)
 DFN5X6-8L package design Application
 Synchronous Rectifier
 Power Supplies
 LED TV Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No. Part Marking Package AFN6252SFN568RG 6252S DFN5X6-8L ※ A Lot code ※ B Date code ※ AFN6252SFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen- Free Unit Tape & Reel Quantity 2500 EA ©Alfa-MOS Technology Corp. Rev.A Jan. 2018 .