6ED2230S12T - Infineon

6ED2230S12T 1200V Three Phase Gate Driver

The 6ED2230S12T is a high voltage, high speed IGBT with three independent high side and low side referenced output channels for three phase applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or TTL outputs, down to 3.3 V logic. An over‐current protecti.

Features

• Infineon Thin-Film-SOI technology
• Fully operational to +1200 V
• Integrated Ultra‐fast Bootstrap Diode
• Floating channel designed for bootstrap operation
• Output source/sink current capability +0.35 A/‐0.65 A
• Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology
• Undervoltage lockout for both channels
• 3.3 V, 5 V, and 15 V input logic compatible
• Over current protection with ±5% ITRIP threshold
• Fault reporting, automatic Fault clear and Enable function on the same pin (RFE)
• Matched propagation delay for all channels
• Integrated .