The devices are full bridge drivers to control power devices like MOSFET or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and vol.
• Infineon thin-film-SOI-technology
• Maximum blocking voltage +600 V
• Output source/sink current +0.165 A/-0.375 A
• Insensitivity of the bridge output to negative
transient voltages up to -50 V given by SOItechnology
• Separate control circuits for all six drivers
• Detection of over current and under voltage supply
• Externally programmable delay for fault clear after over current detection
• 'Shut down' of all switches during error conditions
• Signal interlocking of every phase to prevent crossconduction
Potential applications
Product summary
VOFFSET (6ED003L06-F2) VOFFSET (6ED003L02-F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 6ED003L06-C2 |
Infineon |
High voltage gate driver | |
2 | 6ED003L06-F2 |
Infineon |
200V 3-phase gate driver | |
3 | 6ED2230S12T |
Infineon |
1200V Three Phase Gate Driver | |
4 | 6ED2742S01Q |
Infineon |
160V pre-regulated three phase SOI gate driver | |
5 | 6EDL04I06NC |
Infineon |
High voltage gate driver | |
6 | 6EDL04I06NT |
Infineon |
200V and 600V three-phase gate driver | |
7 | 6EDL04I06PC |
Infineon |
High voltage gate driver | |
8 | 6EDL04I06PT |
Infineon |
200V and 600V three-phase gate driver | |
9 | 6EDL04N02PR |
Infineon |
200V and 600V three-phase gate driver | |
10 | 6EDL04N06PC |
Infineon |
High voltage gate driver | |
11 | 6EDL04N06PT |
Infineon |
200V and 600V three-phase gate driver | |
12 | 6EDL1S |
Tyco |
Power Entry Module |