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6ED2230S12T |
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| Part Number | 6ED2230S12T |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The 6ED2230S12T is a high voltage, high speed IGBT with three independent high side and low side referenced output channels for three phase applications. Proprietary HVIC and latch immune CMOS techno... |
| Features |
• Infineon Thin-Film-SOI technology • Fully operational to +1200 V • Integrated Ultra‐fast Bootstrap Diode • Floating channel designed for bootstrap operation • Output source/sink current capability +0.35 A/‐0.65 A • Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology • Undervoltage lockout for both channels • 3.3 V, 5 V, and 15 V input logic compatible • Over current protection with ±5% ITRIP threshold • Fault reporting, automatic Fault clear and Enable function on the same pin (RFE) • Matched propagation delay for all channels • Integrated ... |
| Document |
 6ED2230S12T Data Sheet
PDF 3.25MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 6ED2742S01Q |
Infineon |
160V pre-regulated three phase SOI gate driver |
|
| 2 | 6ED003L02-F2 |
Infineon |
200V 3-phase gate driver |
|
| 3 | 6ED003L06-C2 |
Infineon |
High voltage gate driver |
|
| 4 | 6ED003L06-F2 |
Infineon |
200V 3-phase gate driver |
|
| 5 | 6EDL04I06NC |
Infineon |
High voltage gate driver |
|