6EDL04I06PT - Infineon

6EDL04I06PT 200V and 600V three-phase gate driver

The device 6ED family – 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up m.

Features

 Infineon thin-film-SOI-technology
 Maximum blocking voltage +600 V
 Output source/sink current +0.165 A/-0.375 A
 Integrated ultra-fast, low RDS(ON) Bootstrap Diode
 Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology
 Separate control circuits for all six drivers
 Detection of over current and under voltage supply
 Externally programmable delay for fault clear after over current detection
 'Shut down' of all switches during error conditions CMOS and LSTTL compatible input (negative logic)
 Signal interlocking of every phase to preven.