6ED003L06-F2 - Infineon

6ED003L06-F2 200V 3-phase gate driver

The devices are full bridge drivers to control power devices like MOSFET or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and vol.

Features

• Infineon thin-film-SOI-technology
• Maximum blocking voltage +600 V
• Output source/sink current +0.165 A/-0.375 A
• Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology
• Separate control circuits for all six drivers
• Detection of over current and under voltage supply
• Externally programmable delay for fault clear after over current detection
• 'Shut down' of all switches during error conditions
• Signal interlocking of every phase to prevent crossconduction Potential applications Product summary VOFFSET (6ED003L06-F2) VOFFSET (6ED003L02-F.