·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 300 ±30 5 V V A ID(puls) Pulse Drain Current 20 A P.
ETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=250µA IF=5A ;VGS= 0 VGS= 10V; ID=2.5A VGS= ±30V;VDS= 0 VDS= 300V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz MIN TYPE MAX UNIT 300 V 2.0 4.0 V 1.6 V 1.4 Ω ±100 nA 10 µA 500 700 16 25 pF 80 110 isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfF.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 5N3011 |
Renesas |
N-Channel MOSFET | |
2 | 5N3011P |
Renesas |
N-Channel MOSFET | |
3 | 5N0431 |
Infineon |
Power-Transistor | |
4 | 5N100-FC |
UTC |
N-CHANNEL MOSFET | |
5 | 5N10029 |
Infineon |
Automotive MOSFET | |
6 | 5N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | 5N120 |
UTC |
N-CHANNEL MOSFET | |
8 | 5N120-E3 |
UTC |
N-CHANNEL POWER MOSFET | |
9 | 5N150UF |
Fairchild Semiconductor |
SGF5N150UF | |
10 | 5N20V |
Gemos |
GE5N20V | |
11 | 5N25 |
UNISONIC TECHNOLOGIES |
3.8A 250V LOGIC N-CHANNEL MOSFET | |
12 | 5N25Z |
UNISONIC TECHNOLOGIES |
3.8A 250V LOGIC N-CHANNEL MOSFET |