The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 2.
RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
● VDS = 20V,ID = 5A
Marking and pin Assignment
APPLICATIONS
● Battery protection
● Load switch
● Power management TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking 5N20V Device GE5N20V Package TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units
ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Current-Pulsed (Note 1) Symbol V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 5N25 |
UNISONIC TECHNOLOGIES |
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2 | 5N25Z |
UNISONIC TECHNOLOGIES |
3.8A 250V LOGIC N-CHANNEL MOSFET | |
3 | 5N0431 |
Infineon |
Power-Transistor | |
4 | 5N100-FC |
UTC |
N-CHANNEL MOSFET | |
5 | 5N10029 |
Infineon |
Automotive MOSFET | |
6 | 5N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | 5N120 |
UTC |
N-CHANNEL MOSFET | |
8 | 5N120-E3 |
UTC |
N-CHANNEL POWER MOSFET | |
9 | 5N150UF |
Fairchild Semiconductor |
SGF5N150UF | |
10 | 5N30 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 5N3011 |
Renesas |
N-Channel MOSFET | |
12 | 5N3011P |
Renesas |
N-Channel MOSFET |