5N150UF - Fairchild Semiconductor

5N150UF SGF5N150UF

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. www.DataSheet4U.com SGF5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impedance Application Switching Power Supply - High Input Voltage Off-li.

Features

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
• High Input Impedance Application Switching Power Supply - High Input Voltage Off-line Converter C G TO-3PF G C E E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Second.