5N105K5 - STMicroelectronics

5N105K5 N-channel Power MOSFET

This N-channel Zener-protected Power MOSFET is designed using ST’s revolutionary avalancherugged very high voltage MDmesh™ K5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. Table 1: Devi.

Features

Order code VDS RDS(on) max. ID PTOT STF5N105K5 1050 V 3.5 Ω 3 A 25 W
 Worldwide best FOM (figure of merit)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected Applications
 Switching applications Description This N-channel Zener-protected Power MOSFET is designed using ST’s revolutionary avalancherugged very high voltage MDmesh™ K5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. Table 1: Device summar.