The UTC 5N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance 1 * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High.
* RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A
* Low Reverse Transfer Capacitance
1
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
TO-247 TO-220 TO-263
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N120L-TA3-T
5N120G-TA3-T
5N120L-TQ2-T
5N120G-TQ2-T
5N120L-TQ2-R
5N120G-TQ2-R
5N120L-T47-T
5N120G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-263 TO-263 TO-247
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 5N120 |
UTC |
N-CHANNEL MOSFET | |
2 | 5N100-FC |
UTC |
N-CHANNEL MOSFET | |
3 | 5N10029 |
Infineon |
Automotive MOSFET | |
4 | 5N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | 5N150UF |
Fairchild Semiconductor |
SGF5N150UF | |
6 | 5N0431 |
Infineon |
Power-Transistor | |
7 | 5N20V |
Gemos |
GE5N20V | |
8 | 5N25 |
UNISONIC TECHNOLOGIES |
3.8A 250V LOGIC N-CHANNEL MOSFET | |
9 | 5N25Z |
UNISONIC TECHNOLOGIES |
3.8A 250V LOGIC N-CHANNEL MOSFET | |
10 | 5N30 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 5N3011 |
Renesas |
N-Channel MOSFET | |
12 | 5N3011P |
Renesas |
N-Channel MOSFET |