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The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBO.
* RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
5N120L-T47-T
5N120G-T47-T
Pin Assignment: G: Gate D: Drain S: Source
Package TO-247
Pin Assignment 123 GDS
Packing Tube
MARKING
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1 of 7
QW-R205-532.A
5N120
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 5N120-E3 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 2 | 5N100-FC |
UTC |
N-CHANNEL MOSFET |
|
| 3 | 5N10029 |
Infineon |
Automotive MOSFET |
|
| 4 | 5N105K5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | 5N150UF |
Fairchild Semiconductor |
SGF5N150UF |
|
| 6 | 5N0431 |
Infineon |
Power-Transistor |
|
| 7 | 5N20V |
Gemos |
GE5N20V |
|
| 8 | 5N25 |
UNISONIC TECHNOLOGIES |
3.8A 250V LOGIC N-CHANNEL MOSFET |
|
| 9 | 5N25Z |
UNISONIC TECHNOLOGIES |
3.8A 250V LOGIC N-CHANNEL MOSFET |
|
| 10 | 5N30 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | 5N3011 |
Renesas |
N-Channel MOSFET |
|
| 12 | 5N3011P |
Renesas |
N-Channel MOSFET |
|