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S(3) AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STWA40N60M2 Product.
Order code STWA40N60M2
VDS 600 V
RDS(on) max. 88 mΩ
ID 34 A
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC resonant converters
Description
S(3)
AM01476v1_tab
This device is an N-channel Power MOSFET developed using MDmesh M2
technology. Thanks to its strip layout and an improved vertical structure, the device
exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency converters.
Product status link S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 40N60 |
IXYS Corporation |
IXSH40N60 |
|
| 2 | 40N60A4D |
Fairchild Semiconductor |
HGT1N40N60A4D |
|
| 3 | 40N60FL |
ON Semiconductor |
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| 4 | 40N60NPFD |
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| 5 | 40N60NPFDPN |
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| 6 | 40N03 |
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| 7 | 40N03GP |
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| 10 | 40N06 |
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|