40N60FL - ON Semiconductor

40N60FL IGBT

NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduc.

Features

a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices Typical Applications
• Solar Inverters
• Uninterruptable Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltag.