VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capability Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = .
International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz
q q q q q q
BVCES VGE(th) I CES I GES VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 4 mA, VCE = VGE
V CE = 0.8
• VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Applications AC motor speed control Uninterruptible power supplies (UPS) Welding
q q q
q
q
Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power densit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 40N60A4D |
Fairchild Semiconductor |
HGT1N40N60A4D | |
2 | 40N60FL |
ON Semiconductor |
IGBT | |
3 | 40N60M2 |
STMicroelectronics |
N-Channel MOSFET | |
4 | 40N60NPFD |
Silan |
600V FIELD STOP IGBT | |
5 | 40N60NPFDPN |
Silan |
600V FIELD STOP IGBT | |
6 | 40N03 |
SeCoS |
N-Channel Enhancement Mode PowerMos FET | |
7 | 40N03GP |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET | |
8 | 40N03P |
Silicon Standard |
SSM40N03P | |
9 | 40N05 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 40N06 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 40N06 |
Din-Tek |
DTU40N06 | |
12 | 40N10 |
VBsemi |
N-Channel MOSFET |