SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT40N60NPFDPN Package TO-3P Marking 40N60NPFD Hazardous Substance C.
40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT40N60NPFDPN Package TO-3P Marking 40N60NPFD Hazardous Substance Control Pb free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current TC=25°C TC=100°C Pulsed Collector Current Maximum Power Dissipation (TC=25C) Operating Junction Temperature Storage Temperature Range Symbol VCE VGE IC ICM PD TJ Tstg Ratings 600 ±20 80 40 120 290 2.32 -55~+175 -55~.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 40N60NPFD |
Silan |
600V FIELD STOP IGBT | |
2 | 40N60 |
IXYS Corporation |
IXSH40N60 | |
3 | 40N60A4D |
Fairchild Semiconductor |
HGT1N40N60A4D | |
4 | 40N60FL |
ON Semiconductor |
IGBT | |
5 | 40N60M2 |
STMicroelectronics |
N-Channel MOSFET | |
6 | 40N03 |
SeCoS |
N-Channel Enhancement Mode PowerMos FET | |
7 | 40N03GP |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET | |
8 | 40N03P |
Silicon Standard |
SSM40N03P | |
9 | 40N05 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 40N06 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 40N06 |
Din-Tek |
DTU40N06 | |
12 | 40N10 |
VBsemi |
N-Channel MOSFET |