40N60M2 |
Part Number | 40N60M2 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | S(3) AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resista... |
Features |
Order code STWA40N60M2
VDS 600 V
RDS(on) max. 88 mΩ
ID 34 A
• Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC resonant converters Description S(3) AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link S... |
Document |
40N60M2 Data Sheet
PDF 345.76KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 40N60 |
IXYS Corporation |
IXSH40N60 | |
2 | 40N60A4D |
Fairchild Semiconductor |
HGT1N40N60A4D | |
3 | 40N60FL |
ON Semiconductor |
IGBT | |
4 | 40N60NPFD |
Silan |
600V FIELD STOP IGBT | |
5 | 40N60NPFDPN |
Silan |
600V FIELD STOP IGBT |