isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N10 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC an.
·Drain Current ID= 40A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.04Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
40
A
IDM
Drain Current-Single Plused
100
A
PD
Total Dissipation @TC=25℃
150
W
Tj
Max. Operating Junctio.
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE 40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low C.
www.din-tek.jp DT81 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V.
40N10-VB TO252 40N10-VB TO252 Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 40N10B |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
2 | 40N10F |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
3 | 40N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | 40N10H |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
5 | 40N120 |
IXYS Corporation |
IXEH40N120 | |
6 | 40N120 |
ON Semiconductor |
IGBT | |
7 | 40N120FL2 |
ON Semiconductor |
IGBT | |
8 | 40N120IHL |
ON Semiconductor |
IGBT | |
9 | 40N15 |
UNISONIC TECHNOLOGIES |
40A 150V N-CHANNEL POWER MOSFET | |
10 | 40N15 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 40N15-HC |
UTC |
N-CHANNEL MOSFET | |
12 | 40N03 |
SeCoS |
N-Channel Enhancement Mode PowerMos FET |