DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use • Driving Battery 0.1 0.4 + – 0.05 : (VDS = 3.5 V) NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) GPS = 19.0 dB TYP. (f = 470 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.2 2.8 + – .
• Low VDD Use
• Driving Battery
0.1 0.4 +
– 0.05
:
(VDS = 3.5 V) NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) GPS = 19.0 dB TYP. (f = 470 MHz)
PACKAGE DIMENSIONS
(Unit: mm)
0.2 2.8 +
– 0.3 0.2 1.5 +
– 0.1 0.1 0.4 +
– 0.05
• Low Noise Figure :
• High Power Gain :
2
• Suitable for use as RF amplifier in CATV tuner.
2.9 ± 0.2 (1.8) 0.95
• Automatically Mounting :
• Package :
Embossed Type Taping 4 Pins Mini Mold
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3SK253 |
NEC |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD | |
2 | 3SK254 |
NEC |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD | |
3 | 3SK255 |
NEC |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD | |
4 | 3SK256 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET | |
5 | 3SK257 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET | |
6 | 3SK258 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET | |
7 | 3SK259 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET | |
8 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD | |
9 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET | |
10 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor | |
11 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR | |
12 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |