Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
3SK259 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK259 TV Tuner, UHF RF Amplifier Applications TV Tuner VHF Wide Band RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.025 pF (typ.) · Low noise figure: NF = 2.6dB (typ.) Maximum Ratings (Ta = 25°C) Characte.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK252 |
NEC |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
|
| 2 | 3SK253 |
NEC |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
|
| 3 | 3SK254 |
NEC |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
|
| 4 | 3SK255 |
NEC |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
|
| 5 | 3SK256 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 6 | 3SK257 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 7 | 3SK258 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 8 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 9 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 10 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 11 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 12 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
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