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3SK252 |
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| Part Number | 3SK252 |
| Manufacturer | NEC |
| Description | DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use • Driving Battery 0.1 0.4 + – 0.... |
| Features |
• Low VDD Use • Driving Battery 0.1 0.4 + – 0.05 : (VDS = 3.5 V) NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) GPS = 19.0 dB TYP. (f = 470 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.2 2.8 + – 0.3 0.2 1.5 + – 0.1 0.1 0.4 + – 0.05 • Low Noise Figure : • High Power Gain : 2 • Suitable for use as RF amplifier in CATV tuner. 2.9 ± 0.2 (1.8) 0.95 • Automatically Mounting : • Package : Embossed Type Taping 4 Pins Mini Mold 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage D... |
| Document |
 3SK252 Data Sheet
PDF 58.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3SK253 |
NEC |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
|
| 2 | 3SK254 |
NEC |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
|
| 3 | 3SK255 |
NEC |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
|
| 4 | 3SK256 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 5 | 3SK257 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
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