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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB • Low Noise Figure: • High Power Gain: • Enhancement Type. 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8 –0..
• The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR =
–30 dB
• Low Noise Figure:
• High Power Gain:
• Enhancement Type.
2.9±0.2 (1.8)
PACKAGE DIMENSIONS
(Unit: mm)
2.8
–0.3
+0.2
+0.2 +0.2
0.4
–0.3
NF2 = 0.9 dB TYP. (f = 55 MHz) GPS = 20 dB TYP. (f = 470 MHz)
0.85 0.95
1.5
–0.3
2
3
0.4
–0.3 0.4
–0.3 0.16
+0.2
–0.3
+0.2
NF1 = 2.2 dB TYP. (f = 470 MHz)
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting:
• Small Package: Embossed Type Taping 4 Pins Mini Mold
1
+0.2
4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltag.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 2 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 3 | 3SK224 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 4 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 5 | 3SK226 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 6 | 3SK227 |
Panasonic |
Silicon N-Channel 4-pin MOSFET |
|
| 7 | 3SK228 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused |
|
| 8 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 9 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 10 | 3SK231 |
NEC |
MOSFET |
|
| 11 | 3SK233 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 12 | 3SK239A |
Hitachi Semiconductor |
GaAs Dual Gate MES FET |
|