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www.DataSheet4U.com Ordering number : EN8649 3LP03SS P-Channel Silicon MOSFET 3LP03SS Features • • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD (TYP 300V) [with a protection diode connected between the gate and source]. Specifications Absolute Maximum Ratings .
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General-Purpose Switching Device Applications
Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD (TYP 300V) [with a protection diode connected between the gate and source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage (
*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings --30 --10 --0.25 --1 0.15 150 --55 to +150 Unit V V A A W °C °C
(
*1) : Note, w.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3LP03M |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 2 | 3LP01C |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 3 | 3LP01M |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 4 | 3LP01N |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 5 | 3LP01S |
ON Semiconductor |
P-Channel Small Signal MOSFET |
|
| 6 | 3LP01S |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 7 | 3LP01SS |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 8 | 3LP01SS |
ON Semiconductor |
P-Channel Small Signal MOSFET |
|
| 9 | 3LP02C |
Sanyo Semicon Device |
P `lMOS `VRdEgWX^ XCb`Op |
|
| 10 | 3LP02M |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 11 | 3LP02N |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 12 | 3LP02SP |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|