www.DataSheet4U.com Ordering number : ENN6646 3LP01N P-Channel Silicon MOSFET 3LP01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 5.0 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [3LP01N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 Specifications .
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Package Dimensions
unit : mm 2178
5.0 4.0
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
[3LP01N]
4.0
0.45 0.5
0.6 2.0
5.0
0.45
0.44
1
2
3
14.0
1 : Source 2 : Drain 3 : Gate
1.3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1.3
SANYO : NP
Ratings -30 ± 10 --0.1 --0.4 0.4 150 --55 to +150
Unit V V A A W °C °C
Electrical Ch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3LP01C |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
2 | 3LP01M |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
3 | 3LP01S |
ON Semiconductor |
P-Channel Small Signal MOSFET | |
4 | 3LP01S |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
5 | 3LP01SS |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
6 | 3LP01SS |
ON Semiconductor |
P-Channel Small Signal MOSFET | |
7 | 3LP02C |
Sanyo Semicon Device |
P `lMOS `VRdEgWX^ XCb`Op | |
8 | 3LP02M |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
9 | 3LP02N |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
10 | 3LP02SP |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
11 | 3LP03M |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
12 | 3LP03SS |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |