3LP02SP - Sanyo Semicon Device

3LP02SP Ultrahigh-Speed Switching Applications

www.DataSheet4U.com Ordering number:ENN6554 P-Channel Silicon MOSFET 3LP02SP Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2180 [3LP02SP] 4.0 3.0 2.2 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Pa.

Features

· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive. Package Dimensions unit:mm 2180 [3LP02SP] 4.0 3.0 2.2 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 3.0 3.8nom 1 : Source 2 : Drain 3 : Gate SANYO : SPA Ratings
  –30 ±10
  –0.2
  –0.8 0.25 150
  –55 to +150 Unit V V A A W ˚C ˚C Electri.