3LP02M - Sanyo Semicon Device

3LP02M P-Channel Silicon MOSFET

www.DataSheet4U.com Ordering number:ENN6127 P-Channel Silicon MOSFET 3LP02M Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2158 [3LP02M] 0.425 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C.

Features

· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive. Package Dimensions unit:mm 2158 [3LP02M] 0.425 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : MCP3 Ratings
  –30 ±10
  –0.2
  –0.8 0.15 150
  –55 to +150 0.2 0.3 Unit V V A A W ˚C ˚C Elec.