3LP01C - Sanyo Semicon Device

3LP01C Ultrahigh-Speed Switching Applications

Ordering number : ENN6645 3LP01C P-Channel Silicon MOSFET 3LP01C Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2091A [3LP01C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.4 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 1 : Gate 2 : Source 3 : Drain 0.8 1.1 SANYO : CP Specifications Abso.

Features

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• Package Dimensions unit : mm 2091A [3LP01C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.4 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 1 : Gate 2 : Source 3 : Drain 0.8 1.1 SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -30 ± 10 --0.1 --0.4 0.25 150 --55 to +150 Unit V V A A W °C °C Electrical Cha.