www.DataSheet4U.com Ordering number : ENN8154 3LP03M P-Channel Silicon MOSFET 3LP03M Features • • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source]. Specifications Absolute Maximum Ratings at Ta=25°C Paramete.
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General-Purpose Switching Device Applications
Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage (
*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -30 -10 --0.25 --1 0.15 150 --55 to +150 Unit V V A A W °C °C
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*1) : Note, when designing a circ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3LP03SS |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
2 | 3LP01C |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
3 | 3LP01M |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
4 | 3LP01N |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
5 | 3LP01S |
ON Semiconductor |
P-Channel Small Signal MOSFET | |
6 | 3LP01S |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
7 | 3LP01SS |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
8 | 3LP01SS |
ON Semiconductor |
P-Channel Small Signal MOSFET | |
9 | 3LP02C |
Sanyo Semicon Device |
P `lMOS `VRdEgWX^ XCb`Op | |
10 | 3LP02M |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
11 | 3LP02N |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
12 | 3LP02SP |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |