The UTC 30NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. FEATURES * RDS(ON) < 0.14Ω @ VGS=10V, ID=15A * High Switch.
* RDS(ON) < 0.14Ω @ VGS=10V, ID=15A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
30NM65L-T47-T
30NM65G-T47-T
30NM65L-TA3-T
30NM65G-TA3-T
30NM65L-TF1-T
30NM65G-TF1-T
30NM65L-TF2-T
30NM65G-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-247 TO-220 TO-220F1 TO-220F2
Pin Assignment 123 GDS GDS GDS GDS
Packing
Tube Tube Tube Tube
MARKING
www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 8
QW-R205-210.D
30NM65
Power MOSFET
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 30NM70 |
UTC |
N-CHANNEL MOSFET | |
2 | 30NM90-Q |
UTC |
900V N-CHANNEL SUPER-JUNCTION MOSFET | |
3 | 30N05 |
Inchange Semiconductor |
N-Channel MOSFET | |
4 | 30N06 |
Inchange Semiconductor |
N-Channel MOSFET | |
5 | 30N06 |
UTC |
N-CHANNEL POWER MOSFET | |
6 | 30N06-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
7 | 30N06G |
UTC |
N-CHANNEL POWER MOSFET | |
8 | 30N06L |
UTC |
N-CHANNEL POWER MOSFET | |
9 | 30N06V-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
10 | 30N10 |
Inchange Semiconductor |
N-Channel MOSFET | |
11 | 30N12 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 30N15 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |