2STX1360 - ST Microelectronics

2STX1360 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The devices are NPN transistors manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. TO-92 TO-92L Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking 2STL1360 L1360 2STX1360 X1360 Octo.

Features

■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast-switching speed Applications
■ Emergency lighting
■ LED
■ Voltage regulation
■ Relay drive Description The devices are NPN transistors manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. TO-92 TO-92L Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking 2STL1360 L1360 2STX1360 X1360 October 2009 Packages TO-92L TO-92 Doc ID 11763 Re.