2STC4467 - STMicroelectronics

2STC4467 High power NPN epitaxial planar bipolar transistor

soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology. The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February.

Features

■ High breakdown voltage VCEO = 120 V
■ Complementary to 2STA1694
■ Fast-switching speed t(s)
■ Typical ft = 20 MHz c
■ Fully characterized at 125 oC roduApplications P
■ Audio power amplifier leteDescription soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology. The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 www.st.com 8.