2STC4467 |
Part Number | 2STC4467 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology. The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour... |
Features |
■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed t(s) ■ Typical ft = 20 MHz c ■ Fully characterized at 125 oC roduApplications P ■ Audio power amplifier leteDescription soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology. The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 www.st.com 8... |
Document |
2STC4467 Data Sheet
PDF 130.11KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2STC4468 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
2 | 2STC2510 |
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High power NPN epitaxial planar bipolar transistor | |
3 | 2STC5200 |
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High power NPN epitaxial planar bipolar transistor | |
4 | 2STC5242 |
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5 | 2STC5948 |
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High power NPN epitaxial planar bipolar transistor |