The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STC2510 Package TO-3P Packaging Tube Order code 2STC2510 May 2008 Rev 2 1/7 www.st.com 7 Electrical rating.
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High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC
3 2 1
Applications
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Audio power amplifier
TO-3P
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STC2510 Package TO-3P Packaging Tube
Order code 2STC2510
May 2008
Rev 2
1/7
www.st.com 7
Electrical ratings
2STC2510
1
Electrical rati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2STC4467 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
2 | 2STC4468 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
3 | 2STC5200 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
4 | 2STC5242 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
5 | 2STC5948 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
6 | 2STC5949 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
7 | 2ST1480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
8 | 2ST15300 |
STMicroelectronics |
Rad-Hard NPN bipolar transistors | |
9 | 2ST2121 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
10 | 2ST2480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
11 | 2ST31A |
STMicroelectronics |
Low voltage NPN power transistor | |
12 | 2ST31A |
INCHANGE |
NPN Transistor |