This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code 2STC5200 Marking 2STC5200 Package TO-264 Packaging Tube December 2007 Rev 2 1/9 www.st.com 9 Electrica.
■
■
■
■
High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz
3
Application
■
Audio power amplifier
1
2
TO-264
Description
This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code 2STC5200 Marking 2STC5200 Package TO-264 Packaging Tube
December 2007
Rev 2
1/9
www.st.com 9
Electrical ratings
2STC5200
1
www.datasheet4u.com
Electrical ratings.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2STC5242 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
2 | 2STC5948 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
3 | 2STC5949 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
4 | 2STC2510 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
5 | 2STC4467 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
6 | 2STC4468 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor | |
7 | 2ST1480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
8 | 2ST15300 |
STMicroelectronics |
Rad-Hard NPN bipolar transistors | |
9 | 2ST2121 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
10 | 2ST2480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
11 | 2ST31A |
STMicroelectronics |
Low voltage NPN power transistor | |
12 | 2ST31A |
INCHANGE |
NPN Transistor |