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2SK3587-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maxim.
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 100 V 70 A Continuous drain current ±73 Equivalent A Pulsed drain current ±292 V Gate-source voltage ±30 A Non-repetitive Avalanche current 73 mJ Maximum Avalanche Energy 319.2 kV/µs Maximum Drain-Source dV/dt 20 kV/µs Peak Diode Recovery dV/dt.
2SK3587-01MR - Inchange Semiconductor
·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK358 |
Toshiba |
N-Channel Transistor |
|
| 2 | 2SK358 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK3580-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 4 | 2SK3580-01MR |
INCHANGE |
N-Channel MOSFET |
|
| 5 | 2SK3581-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 6 | 2SK3581-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 7 | 2SK3581-01SJ |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 8 | 2SK3581L |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 2SK3581S |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK3582TK |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 11 | 2SK3582TV |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 12 | 2SK3586-01 |
Fuji Electric |
N-Channel MOSFET |
|