·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Pluse 64 A PD Total Dissipation @TC=25℃ 225 W TJ Max. Operating Junction Temp.
·Drain Current : ID= 16A@ TC=25℃
·Drain Source Voltage
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.46Ω(Max) @ VGS= 10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
16
A
IDM
Drain Current-Single Pluse
64
A
PD
Total Dissipation @TC=25℃
225
W
TJ
Max. O.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3581-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
2 | 2SK3581-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
3 | 2SK3581-01SJ |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
4 | 2SK3581S |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK358 |
Toshiba |
N-Channel Transistor | |
6 | 2SK358 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK3580-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
8 | 2SK3580-01MR |
INCHANGE |
N-Channel MOSFET | |
9 | 2SK3582TK |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK3582TV |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK3586-01 |
Fuji Electric |
N-Channel MOSFET | |
12 | 2SK3586-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |