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2SK3580-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (T.
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS VDSX
*5 ID ID(puls] VGS IAR
*.
2SK3580-01MR - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Stan.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK358 |
Toshiba |
N-Channel Transistor |
|
| 2 | 2SK358 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK3581-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 4 | 2SK3581-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 5 | 2SK3581-01SJ |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 6 | 2SK3581L |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 2SK3581S |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 2SK3582TK |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 9 | 2SK3582TV |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 10 | 2SK3586-01 |
Fuji Electric |
N-Channel MOSFET |
|
| 11 | 2SK3586-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | 2SK3587-01MR |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|