www.DataSheet4U.com 2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and charac.
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
P4
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Ratings Unit V V DS 500 A ID ±16 A ID(puls] ±64 V VGS ±30 A IAR
*2 16 mJ EAS
*1 212.2 kV/µs dVDS/dt
*4 20 dV/dt
*3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 225 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C
*1 L=1.52mH, Vcc=50V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch < 150°C =
*3 IF <.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3581-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
2 | 2SK3581-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
3 | 2SK3581L |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK3581S |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK358 |
Toshiba |
N-Channel Transistor | |
6 | 2SK358 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK3580-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
8 | 2SK3580-01MR |
INCHANGE |
N-Channel MOSFET | |
9 | 2SK3582TK |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK3582TV |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK3586-01 |
Fuji Electric |
N-Channel MOSFET | |
12 | 2SK3586-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |