2SK358 - Inchange Semiconductor

2SK358 N-Channel MOSFET Transistor

·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed APPLICATIONS ·High speed. ·high voltage Switching applications DC–DC converter and motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 250 V Gate-Source Voltage ±20 V D.

Features

STICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS= 0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=3A;RL=50Ω toff Turn-off time MIN TYP MAX UNIT 250 V 1.5 3.5 V 0.7 1.0 Ω ±100 nA 1 mA 20 40 ns 30 60 ns 30 60 ns 80 160 ns isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pr.