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2SK3587-01MR |
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| Part Number | 2SK3587-01MR |
| Manufacturer | Fuji Electric |
| Description | 2SK3587-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outlin... |
| Features |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit V 100 V 70 A Continuous drain current ±73 Equivalent A Pulsed drain current ±292 V Gate-source voltage ±30 A Non-repetitive Avalanche current 73 mJ Maximum Avalanche Energy 319.2 kV/µs Maximum Drain-Source dV/dt 20 kV/µs Peak Diode Recovery dV/dt... |
| Document |
 2SK3587-01MR Data Sheet
PDF 93.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK3587-01MR |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK358 |
Toshiba |
N-Channel Transistor |
|
| 3 | 2SK358 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK3580-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 5 | 2SK3580-01MR |
INCHANGE |
N-Channel MOSFET |
|