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2SK3580-01MR |
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| Part Number | 2SK3580-01MR |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot va... |
| Features |
·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 48 PD Total Dissipation 35 Tj Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THE... |
| Document |
 2SK3580-01MR Data Sheet
PDF 251.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK3580-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 2 | 2SK358 |
Toshiba |
N-Channel Transistor |
|
| 3 | 2SK358 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK3581-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 5 | 2SK3581-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|