·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·High speed power Switching . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 450 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 3 A Total Dissipation@TC=25℃ 40 W.
eakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=360V; VGS= 0 VSD Diode Forward Voltage IF= 2A; VGS= 0 tr Rise time ton Turn-on time tf Fall time VGS=15V;ID=2A;RL=15Ω toff Turn-off time MIN TYP MAX UNIT 450 V 1.0 5.0 V 2.5 4.0 Ω ±1 uA 1 mA 0.85 V 16 ns 25 ns 30 ns 70 ns isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK310 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK310 |
Hitachi Semiconductor |
(2SK310 / 2SK311) SILICON N-CHANNEL MOS FET | |
3 | 2SK3101LS |
Sanyo |
N-Channel Silicon MOSFET | |
4 | 2SK3102-01R |
Fuji Semiconductors |
MOSFET / Power MOSFETs | |
5 | 2SK3105 |
NEC |
N-Channel MOSFET | |
6 | 2SK3107 |
NEC |
N-Channel MOSFET | |
7 | 2SK3107C |
Renesas |
N-CHANNEL MOSFET | |
8 | 2SK3108 |
NEC |
N-Channel MOSFET | |
9 | 2SK3109 |
NEC |
N-Channel MOSFET | |
10 | 2SK3109-AZ |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK3110 |
NEC |
N-Channel MOSFET | |
12 | 2SK3111 |
NEC |
N-Channel MOSFET |