2SK3110 - NEC

2SK3110 N-Channel MOSFET

The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. ORDERING INFORMATION PART NUMBER 2SK3110 PACKAGE Isolated TO-220 FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 180 mΩ MAX. (VGS.

Features

a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. ORDERING INFORMATION PART NUMBER 2SK3110 PACKAGE Isolated TO-220 FEATURES
•Gate voltage rating ±30 V
•Low on-state resistance RDS(on) = 180 mΩ MAX. (VGS = 10 V, ID = 7.0 A)
•Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
•Built-in gate protection diode
•Avalanche capability rated
•Isolated TO-220 package ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current.